Samsung Debuts Comprehensive 3D AI Memory Roadmap With zHBM, zNAND-O, And V10 BV-NAND
Samsung Electronics unveiled its next-generation AI reminiscence portfolio on the Future of Memory and Storage (FMS) 2026 convention in Santa Clara, California, presenting a complete expertise roadmap designed to satisfy the quick rising calls for of high-performance computing and synthetic intelligence infrastructure.
The firm showcased roughly 30 reminiscence and storage applied sciences at an AI cloud server-inspired sales space, whereas Jin-Yub Lee, Executive Vice President and Head of Flash Product & Technology, and Kyungryun Kim, Vice President of the DRAM Design Team, delivered the opening keynote titled “Driving the Wave of AI Revolution: 3D Innovations in Memory & Storage Architecture.”
Vertical Architectures Redefine Memory-Processor Integration
At the middle of Samsung’s imaginative and prescient are two idea fashions that basically restructure how reminiscence interfaces with processors. The firm launched zHBM, which vertically stacks high-bandwidth reminiscence straight above AI accelerators fairly than positioning it alongside the chip. Samsung states that this design minimizes information journey distance, delivering roughly eight instances the efficiency of HBM5, greater than ten instances the reminiscence density, and thrice the vitality effectivity, whereas decreasing thermal resistance by over half.
The structure additionally helps customized mental property integration between layers, enabling tailor-made options for particular accelerators. Alongside zHBM, Samsung previewed zNAND-O, a V-NAND-based resolution developed in four- and eight-layer variants that mixes high house effectivity with low latency for real-time edge AI workloads.
From 400-Layer NAND to Integrated Turnkey Production
Samsung additionally introduced V10 BV-NAND, the business’s first Bonding V-NAND structure enabled by new wafer bonding expertise. Featuring greater than 400 layers, the machine will increase reminiscence density by roughly 58 % over the earlier V9 technology whereas bettering learn, write, and I/O efficiency. The milestone arrives 13 years after Samsung launched the business’s first V-NAND.
Beyond idea {hardware}, Samsung detailed its near-term manufacturing roadmap. Following the business’s first mass manufacturing of HBM4 in February, the corporate started delivery HBM4E samples in May and exhibited its HBM5 mannequin at FMS 2026. Samsung additionally showcased LPDDR5X-PIM, the business’s first low-power DDR reminiscence with processing-in-memory expertise, which executes computations throughout the reminiscence array to restrict information motion and energy draw.
For information heart infrastructure, the PM1763 and BM1773 enterprise storage options have been featured. As the only built-in machine producer with main capabilities throughout reminiscence, foundry, and superior packaging, Samsung highlighted its end-to-end turnkey technique, providing built-in design and manufacturing providers meant to shorten growth cycles and optimize efficiency for AI semiconductor clients.
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